EE372_Assignment7 - Chapter 5 Chapter 5 5.9 Compensation...

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Chapter 5 5.1 Chapter 5 5.9 Compensation doping in Si a . A Si wafer has been doped n -type with 10 17 As atoms cm -3 . 1. Calculate the conductivity of the sample at 27 C. 2. Where is the Fermi level in this sample at 27 C with respect to the Fermi level ( E Fi ) in intrinsic Si? 3. Calculate the conductivity of the sample at 127 C. b . The above n -type Si sample is further doped with 9 10 16 boron atoms ( p -type dopant) per centimeter cubed. 1. Calculate the conductivity of the sample at 27 C. 2. Where is the Fermi level in this sample with respect to the Fermi level in the sample in (a) at 27 C? Is this an n -type or p -type Si? 5.10 Temperature dependence of conductivity An n -type Si sample has been doped with 10 15 phosphorus atoms cm -3 . The donor energy level for P in Si is 0.045 eV below the conduction band edge energy. a . Calculate the room temperature conductivity of the sample. b
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This note was uploaded on 01/20/2011 for the course EE 372 taught by Professor Johanson/kasap during the Fall '10 term at University of Saskatchewan- Management Area.

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EE372_Assignment7 - Chapter 5 Chapter 5 5.9 Compensation...

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