ee-372-2003-t1-midterm-2 - ‘yl October 31, 2003...

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Unformatted text preview: ‘yl October 31, 2003 University of Saskatchewan Department of Electrical Engineering EE372 Electronic Materials and Devices Midterm Examination Professor Robert E. Johanson PART B (open textbook) Name: ((o/ Student Number: [p/é Welcome to the EE372 Midterm. The examination has two parts. Part A consists of questions that test knowledge of basic concepts, and part B requires more involved calculations. Part A is closed book and closed notes. When you finish part A, hand it in (raise your hand) and then proceed to part B. Part B is open book; you may refer to your textbook (Kasap, any edition) but not to any other material such as notes or other books. You may also use a calculator for both parts. The examination lasts 2 hours. Each problem is weighted equally. Show your work if the question involves more than a simple answer; credit will be given only if the steps leading to the answer are clearly shown. Partial credit will be given for partially correct answers but only if correct intermediate steps are shown. Write your answers on these pages. For part B, answer 3 of the 4 questions. Do not answer more than 3 questions. / gc7o P9P.“ \ 0 total 13 / 39 PHYSICAL CONSTANTS c = 29979wa m 5-3 e =1.6021x10-19 C me = 9.1091x10'31 kg h = 6.62608x10'34 J s k = 1.3807x10-23 J K-1 . £0 = 8.8542x10-12 F m-1 flSemiconductor Statistics 3) A silicon crystal is uniformly doped with 3x10l6 cm'3 of boron acceptors. What is the density of holes in the valence band and electrons in the conduction band? Calculate the position of the Fermi level with respect to the valence band edge E at T \1 b) The above silicon crystal is ion implanted with 2x 1017 cm'3 phosphorous donor atoms creating compensated silicon. What is the density of holes in the valence band and electrons in the conduction band now? Calculate the new position of the Fermi level with respect to the conduction band edge EC. ‘ lo ’3 QNazgx/a/écm’g Na>§fl¢ (IQ/MLBK/w (m (IVE/8qu 23_NQP_3X10’ 6/ m « ' 7’4” ‘L ‘.””"'”\i6r§‘ wk ix? “MEIQEMEi/M -;M°fg n 7. 7k - I t .. .‘ no ,770 1/ l .7 ;~. I /P E30 (Nit EV (20L $3303“? éfibclg‘ E?,Eo:,kfl,nm :0451 95- v .. ‘ V 3 P? NV WP FM: (“a i [6 as if? A); —C-;@0}57 Vjfin(§j~0~cm- V Efl’g", “kT NV ‘ I & AN 3/12; H -'5 " "'S -. . Nv>3139*X’0flx NV loxm am «5 ’i’ ' 45 y r; ’ 55” 5W“ 5- gm wolf ThSBSV-W’JW low SN» WégQ/thg/hke, «nope/j \Lh +h>§wmwx as? OanQo b} n: Mm..— Hm”- 3m": LZ/VO‘ZIBV [it a m .7 l . 7 3/9 ' \‘%’ mam/r”? W ‘ #3 iv _ Tl' Aoamwagaidbc a magic/i W X -’.‘> ' 59 m h" Mo¢$6$fl°yg age» 6 m $45 ; u x, *7 77:7 7 #: .F—(—<v~ ,2./ Hydrogen Atom V A gas of hydrogen atoms absorbs li ht wi w velen th 102. &nm. To what energy level are the electrons excited by absorbing this light. - ZfCalculate all possible wavelengths of light that are emitted by the above excited ydrogen atoms as they return to the ground state. “V; C E 3 h’V 7’ /C’a :35 x€@4//0U if z ’2'”, /\ . /0}rS}XXlo4W Mafiflofly [fix/W malgvé 12,30) ? K c/ W’iizgijlgl'u/ r _,_,,M{ E413 aw” Mafia is level 7192 ham ihrs (13h? 7; f 7 "£3 3;}, 9/!) 34 grassr‘k'c/“S A63. $éil/9lelb’é 43w) 6 W l’Sb‘hwx‘uhqt/QA': file At; A ’ he ’ @W‘Dmfigfiéfl/Ogflél « log/gm?) / 3” :65! / 4091?):519); c M‘ /§A[, 06;}: HEW-(v 3,L,to€u3 : QM 2’7; A”; fit :— @wM‘tngE/M/oqmg/l @227)?“ 45;? 7mg (LLD?&£V_‘{ 41:) «an 3’7} / _, ’éh‘ogv # (—Iuevl ; QM ' QED) : :0 a}, A; w, - @z/)m€)</o’§+?§'>[_§£x@ :ZEWWm/ L/ 9"“ / " ” 4—,-” ' 0533 Wfla%zj (0 Quantum Tunneling -An insulator in an electronic device presents a potential barrier that is 10 eV high. If the v electrons’ energy is 5 eV, how thick must the insulator be so that the probability of tunneling through the barrier is 0.05? Mac; \ z ,, a / W fiéqqouy/o’WkgBC/Oev—Ed‘bm599W!) We»? 2’ 99:/.l5X/@‘0m” w (13 DLQ willie?» > I 030 Mt‘dCJquV/‘ev 7LWSWT‘SSC00 606+?[fC/‘01‘7J/ 053m} JO gwakw 3,24 vim MSW: ‘1‘ij met/90W) Tog u 5W) fl MéBevWaeVgL~Ee® : i v rm), (£0645 6 TB 46XPC‘}°4C‘3 (NW Dng 0‘ {jerk/Yr?) 046:), w.‘ ‘7; _r (:77 F 77 V7 4. Generation and Recombinat1 phorous donor atoms. The hole 11 is illuminated with light such that the A piece of n-type Si is doped with 1 (minority carrier) lifetime is 1 us. The ' ' generation rate is G = 3 x1020 cm'3 ' . ier) and hole (minority carrier) / a) What are the steady-state ctron (majority c densities while the silico s illuminated? b) The electron ole mobilities are ye = 1300 csz '1 and ,uh = 450 csz'ls'1 What is the c ductivity of the silicon in darkness and durin illumination? _/ (9%" «3 IS Advise/male HMO/w 3 :/6X60 cm ‘35 0’; Gone n-h/WPB «l 0.99% for“ a / afiWKfi 6M0” ram-ma lim awn?) : Wti‘om’ l ...
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This note was uploaded on 01/20/2011 for the course EE 372 taught by Professor Johanson/kasap during the Fall '10 term at University of Saskatchewan- Management Area.

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ee-372-2003-t1-midterm-2 - ‘yl October 31, 2003...

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