HW4+ChE+150B+F2010

# HW4+ChE+150B+F2010 - ChE 150B Problem Set 4 Due Problem...

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ChE 150B Problem Set 4 Due September 24, 2010 Problem 1. (20 points) Trichlorethane, Cl 3 CCH 3 (TCA), is used to chlorinate films of SiO 2 grown by thermal oxidation. A semiconductor fabrication process has been proposed involving the evaporation of the TCA into a flowing inert gas stream. A pan will contain the liquid TCA at a uniform depth of 0.1 m and a length of 4 m in the direction the 6 m/s insert gas will flow. The pan is quite wide. The liquid TCA will be maintained at a temperature of 293 K and the system’s pressure will be 1.013x10 5 Pa. Under these conditions, the vapor pressure of TCA is 1.33x10 4 Pa, the kinematic viscosity of the inert gas is 1.5x10 -5 m 2 /s, and the diffusivity of TCA may be assumed to be 1.0x10 -5 m 2 /s. If the density of the liquid TCA is assumed to be 1 g/cm 3 and the transition from laminar to turbulent flow occurs at Re x = 2x10 5 , determine the time that will be required to evaporate the TCA. Problem 2. (15 points) A 1-m square, thin plate of naphthalene is oriented parallel to an air stream flowing at 30 m/s.

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HW4+ChE+150B+F2010 - ChE 150B Problem Set 4 Due Problem...

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