Fall04_test3_sol

# Fall04_test3_sol - ECE 3 52- Fall 2 004 Test3 - - S...

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L ECE 352 -Fall 2004 Test 3 -- Solutions November 23. 2004 A L2ng thin rylitu*ical rcd oJ electronic material has .qn ato4ic denrity oJ 5.5 ' It' cm'' Each cuon har a tularizabili y of 3.4 ' 10 " F-cn . Find thz intenal electic field when an axial feld of 20 mV/cm is applied to the ends of the lod The dipole thal is prcduced in each atom is the product of tbe alomic poladzability and the electric field. Hence, the total polarization in an extemal electric field of20 mv/cm is P = NpE =5.5x1028 3"4xl0rl .2=3.74x10-12 coul/m2. Hence, the relative dielectric constant is p €, = | + - =t +0.21t = t.21t. l:oL The axial field. at the ends. is discontinuous by tie dielectric conslanl so thal the internal field is I Eift = -2= l6jmY / cm. An n-channel MOSFET has an qxide thickness of 5 nm, oxide dielectric constant of 3.8, VLg: 20, ti" -500 cm?,As, and vr: b.l V. Calculate the saturation cuffenL Assume Ycs

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## This note was uploaded on 01/23/2011 for the course ECE 352 taught by Professor Effw during the Spring '06 term at ASU.

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Fall04_test3_sol - ECE 3 52- Fall 2 004 Test3 - - S...

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