Fall06_test2_sol

# Fall06_test2_sol - E EE3 52 F all 2 006 Test2 S olutions A...

This preview shows pages 1–2. Sign up to view the full content.

EEE 352 - Fall 2006 Test 2 - Solutions A Si p-n junction is measured to haw a built-in potentiti of 0.9542 V antl a junction depletion tidth o;f 0.113 pm. What are ND and Na in the n- and p-type regions, respectively? The -type region is the heavier doped ofthe two. From the junction built-in voltage equation, we can find the product NDN^ as: 1^i I evh, = karkl':+!l \ni ) From thejunction width, we can find the sum oftle two dopants as: Np +]y'; =ly'pN1 = | .0 x7019 cm-3 2e V61 We oan now solve these two equations together to find: No =1.0*1019 cu-3 N 't = | '0 '1017 cm-3 2. An n-channel MOSFET has d|1 o-rc[de thicktryss of 5 nm, ocide dielectric constalttt of 3.8, VL": 20, p":500 cm2trs, onll h = b.l V. Calculate the saturation cur-rent_ Assume I/CS: 1.5 V. The current in the MOSFET in the saturation condition are [ts' - fnm t 1'K L) J1- -t'tJD L-/'t Lft= A lv "lre =^" , v""@.,, ,, z .,a,' ^r 'DS - \^ I'G\ -// ' Do. I i:! *b ts*'.i"

This preview has intentionally blurred sections. Sign up to view the full version.

View Full Document
This is the end of the preview. Sign up to access the rest of the document.

## This note was uploaded on 01/23/2011 for the course ECE 352 taught by Professor Effw during the Spring '06 term at ASU.

### Page1 / 3

Fall06_test2_sol - E EE3 52 F all 2 006 Test2 S olutions A...

This preview shows document pages 1 - 2. Sign up to view the full document.

View Full Document
Ask a homework question - tutors are online