Fall06_test2_sol

Fall06_test2_sol - E EE3 52 F all 2 006 Test2 S olutions A...

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EEE 352 - Fall 2006 Test 2 - Solutions A Si p-n junction is measured to haw a built-in potentiti of 0.9542 V antl a junction depletion tidth o;f 0.113 pm. What are ND and Na in the n- and p-type regions, respectively? The -type region is the heavier doped ofthe two. From the junction built-in voltage equation, we can find the product NDN^ as: 1^i I evh, = karkl':+!l \ni ) From thejunction width, we can find the sum oftle two dopants as: Np +]y'; =ly'pN1 = | .0 x7019 cm-3 2e V61 We oan now solve these two equations together to find: No =1.0*1019 cu-3 N 't = | '0 '1017 cm-3 2. An n-channel MOSFET has d|1 o-rc[de thicktryss of 5 nm, ocide dielectric constalttt of 3.8, VL": 20, p":500 cm2trs, onll h = b.l V. Calculate the saturation cur-rent_ Assume I/CS: 1.5 V. The current in the MOSFET in the saturation condition are [ts' - fnm t 1'K L) J1- -t'tJD L-/'t Lft= A lv "lre =^" , v""@.,, ,, z .,a,' ^r 'DS - \^ I'G\ -// ' Do. I i:! *b ts*'.i"
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This note was uploaded on 01/23/2011 for the course ECE 352 taught by Professor Effw during the Spring '06 term at ASU.

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Fall06_test2_sol - E EE3 52 F all 2 006 Test2 S olutions A...

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