7 - Transistors and Active Elements

7 - Transistors and Active Elements - ELEC 300V:...

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ELEC 300V: FUNDAMENTALS OF ELECTRO-ROBOTIC Transistors and Active Elements Mansun Chan Department of ECE, HKUST
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ELEC 300V Ideal PN Diode - I reverse bias forward bias P-side N-side + Anode Cathode V I I Simple application: ectifier V Rectifier A B at B me V in V in time at A ansun M Hong Kong University of Science & Technology, Department of Electronic & Computer
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ELEC 300V Construction of Logic Gate with Diodes (1) OR Gate V V V V O Input/ Output Table = V V A V B 000 0 001 1 1 5V 0 = 0V V C V O 010 1 011 1 R 100 1 101 1 110 1 111 1 ansun M Hong Kong University of Science & Technology, Department of Electronic & Computer
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ELEC 300V Construction of Logic Gate with Diodes (2) AND Gate V V V V O Input/ Output Table = V 5V R 000 0 001 0 1 5V 0 = 0V V A 010 0 011 0 V B V O 100 0 101 0 V C 110 0 111 1 ansun M Hong Kong University of Science & Technology, Department of Electronic & Computer
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ELEC 300V Exercise What is the value V O and the current through the resistor I ? 5V 3V V R= 1k V 2V 1V V I O I 3V 2V R= 1k V O 1V ansun M Hong Kong University of Science & Technology, Department of Electronic & Computer
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ELEC 300V Real Diode Characteristics I + - Equivalent Model resistance simplify V V on (typically 0.7V ) 7V ideal diode breakdown 0.7V 1 0 th V V e I I The breakdown voltage is usually very high (except for Zener diode) and we o not want to work in that region ansun M Hong Kong University of Science & Technology, Department of Electronic & Computer do not want to work in that region
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ELEC 300V Result of non-ideality in Rectifier 0 S R V V at A A B at B me 5V 5V- V on time A =5V Power delivered to the load only for less than half of the cycle ansun M Hong Kong University of Science & Technology, Department of Electronic & Computer
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ELEC 300V Exercise for Non-ideal Diode V= 0.7V 5V What is the value V O and the current through the resistor I ? 3V R= 1k I 2V V 3V V O R= 100 1V V O = k R= 100 2V I R 1k 1V = 7V ansun M Hong Kong University of Science & Technology, Department of Electronic & Computer V 0.7V
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ELEC 300V Bipolar Junction Transistor (BJT) There are two types of standard BJT with different circuit symbols E E B B C or B B C NPN PNP E C NPN PNP E C The leads are labeled Collector (C), Base (B) and Emitter (E) The N and P refers to the material that is used to construct the transistor N P P N C B E B ansun M Hong Kong University of Science & Technology, Department of Electronic & Computer N P EC
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ELEC 300V NPN Transistor as a Switch I C V
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This note was uploaded on 01/28/2011 for the course ELEC 300V taught by Professor C.ytsuiandmansunchan during the Fall '08 term at HKUST.

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7 - Transistors and Active Elements - ELEC 300V:...

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