ECE227A_HW3_Solution_2010

ECE227A_HW3_Solution_2010 - C =(2/3 ΔE g(2 InP/InGaAsP...

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Homework 3 Solutions 10. Assuming barriers of 8nm (since this was not explicitly given in the problem, any value assumed was correct), a) 66 . 2 4 * 8 5 * 8 52 . 2 * 4 * 8 77 . 2 * 5 * 8 2 n n 1 = n 3 = 2.52     94 . 0 52 . 2 66 . 2 ) 72 ( 410 2 2 2 0 2 / 1 2 2 2 / 1 n n d k III II V 172 . 2 1 2 ln 1 2 2 V V b 55 . 2 2 / 1 2 2 ) 1 ( n b bn III II n b)     nm n n k n k I I / 00598 . 000036 . 52 . 2 55 . 2 410 2 2 2 2 2 2 2 0 2 2 0 2 2 x U exp 15. Band offset is the fraction of the bandgap difference between two materials that occurs in the conduction band versus the valence band. It essentially tells you how large the barrier to carriers is in the valence band and conduction band, since the bandgap offset is not generally split evenly between the two. It is important to know accurately because it will influence the calculations of where the energy levels are in the conduction and valence band. (1) GaAs based lasers: ΔE
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Unformatted text preview: C = (2/3) ΔE g (2) InP/InGaAsP Lasers: ΔE C = (2/5) ΔE g InP/InAlGaAs: ΔE C = (7/10) ΔE g 17. Assuming barriers of 10nm, a) 46 . 3 4 * 10 5 * 10 39 . 3 * 4 * 10 52 . 3 * 5 * 10 2 n Homework 3 Solutions n 1 = n 3 = 3.39 399 . 39 . 3 46 . 3 ) 9 )( 10 ( 980 2 2 2 2 / 1 2 2 2 / 1 n n d k III II V 0339 . 2 1 2 ln 1 2 2 V V b 393 . 3 2 / 1 2 2 ) 1 ( n b bn III II n b) 1 2 1 2 2 2 2 1 2 2 2 2 2 2 896 . 39 . 3 393 . 3 980 2 m n n k n k I I x U exp...
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This note was uploaded on 02/02/2011 for the course ECE 227A taught by Professor Coldren during the Spring '08 term at UCSB.

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ECE227A_HW3_Solution_2010 - C =(2/3 ΔE g(2 InP/InGaAsP...

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