3TDRCurves_of_typical_components

3TDRCurves_of_typical_components - 3.7.2.2 TDR PLOTS...

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3.7.2.2 TDR PLOTS TUTORIALS This chapter is intended to give you some ideas on how electronic components look like in the time domain. INTRODUCTION The characterization of parasitic devices can be done in the time domain or in the frequency domain. But time domain may be smarter, since the parasitic devices show-up with respect to their physical location. In the frequency domain, using s-parameters, we always have an overlay of curves that 'turn to the right' for capacitors, inductors or delay lines. Note: For frequencies below 3GHz, a simple parasitic device schematic is often sufficient (two delay lines or capacitors at port1 and port2 and a cross-coupling capacitor, no inductors). Using time domain, it is best using a t ime d omain r eflectometer (TDR) like the hp54xxx series oscilloscopes with a TDR plug-in on channel_1. A voltage step of typically 200mV is triggered by IC-CAP on channel_1 and the back reflections are then measured by channel_1 also. Using other channels of the TDR, one could also measure the cross-coupling from one port of the test object to another. TDR measurements are best for the modeling of geometrically large or spread structures.
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This note was uploaded on 02/02/2011 for the course ECE 227A taught by Professor Coldren during the Spring '08 term at UCSB.

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3TDRCurves_of_typical_components - 3.7.2.2 TDR PLOTS...

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