Lecture 7 Photodetectors Spr2010

Lecture 7 Photodetectors Spr2010 - Photodetectors...

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Spring 2010 MAT 288S Optoelectronic Measurements 1 Photodetectors Photodiodes, and Photodiode Arrays Responsivity, noise, NEP, D* Biasing, temporal response and noise Photomultipliers Understanding specifications
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Spring 2010 MAT 288S Optoelectronic Measurements 2 Photodiodes p n Built-in field separates carriers Carriers generated in bulk diffuse to depletion region
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Absorption Coefficients Spring 2010 MAT 288S Optoelectronic Measurements 3
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Spring 2010 MAT 288S Optoelectronic Measurements 4 Absorption Depth Silicon Some carriers generated in bulk Slow diffusion to depletion region
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Silicon Photodiodes Spring 2010 MAT 288S Optoelectronic Measurements 5 Schottky Barrier Planar Diffused
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Responsivity and Quantum Efficiency Spring 2010 MAT 288S Optoelectronic Measurements 6 QE = electrons out / photons in Responsivity = Amps out / Watts in () () () () () nm nm eV h hc q QE h q QE R λ ν λλ = = = 1240
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Silicon PD Spectral Response Spring 2010 MAT 288S Optoelectronic Measurements 7 Ideal QE
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UV-VIS and NIR Spring 2010 MAT 288S Optoelectronic Measurements 8 Silicon InGaAs
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This note was uploaded on 02/02/2011 for the course ECE 227A taught by Professor Coldren during the Spring '08 term at UCSB.

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Lecture 7 Photodetectors Spr2010 - Photodetectors...

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