2009.01.12-ECE659-L1-notes

2009.01.12-ECE659-L1-notes - 0 nm Macroscopic dimensions...

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ECE 659 Quantum Transport: Atom to Transistor Lecture 1: Introduction Supriyo Datta Spring 2009 Notes prepared by Samiran Ganguly
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S D L Vd Field Effect Transistor is the most common device today Modern day processors have a billion each It is a resistor whose resistance can be controlled The third terminal, gate (Vg), controls the resistance Vd drives the current through the device Vg Typically Vd varies from 0.5V to 1V, R varies from 10k to 100M* * The online lecture shows the variation as 10k to 1M, these notes present the correct value Other interesting device: Energy Conversion devices Sensors I Vd Vg
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0.1 mm 10 µm 1 µ m 0.1 µm
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Unformatted text preview: 0 nm Macroscopic dimensions Present commercial technology L R A A G L = = Ohms Law Does it makes sense to talk about resistance of very small conductor? Yes. It does. ean free time 10 nm 1 nm 0.1 nm I V <--- L ---> Atomic dimensions Top down approach: q qn m = Mean free time Effective mass Electron density 2 2 2 1 1 d E m dk = m = ( 29 2 q G D h = Quantum of Conductance 1 25 k D -> density of states E 2 1 1-2=qVd h = Rate at which electrons can come out and go into channel D(E) 2 1 1 D AL L L Ballistic transport Diffusive transport...
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This note was uploaded on 01/30/2011 for the course ECE 659 taught by Professor Staff during the Spring '08 term at Purdue University-West Lafayette.

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2009.01.12-ECE659-L1-notes - 0 nm Macroscopic dimensions...

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