processspecfile4DBC6217d01

processspecfile4DBC6217d01 - X-FAB Semiconductor Foundries...

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Unformatted text preview: X-FAB Semiconductor Foundries Haarbergstraße 67 D-99097 Erfurt Germany phone (++49) 361-427-6663 fax (++49) 361-427-6631 Process Specification XC06 - 0.6 μm Modular CMOS Document PS_06_03 Release 3.0 September 2005 Company Confidential ! Do not print or copy this document without permission of X-FAB Semiconductor Foundries! Strictly controlled. Process Specification XC06 PS_06_03 Release 3.0 Page 1 Company Confidential Table of Contents 1. Introduction 5 1.1. Revision 5 1.2. Related Documents 7 1.3. General Notes 7 1.4. Support 7 1.5. Process Family 8 2. General 12 2.1. Main Process Flow 12 2.2. Wafer Cross-Section 15 2.3. Bond Pad Structure 18 2.4. Primitive Device List 24 2.5. Operating Conditions 30 2.6. Current Densities 39 3. Process Control Parameters 40 3.1. Introduction 40 3.2. CORE Module Parameters 41 3.2.1. Structural and Geometrical Parameters 41 3.2.2. 5V MOS Electrical Parameters 42 nmos 42 pmos 43 Parasitic Field Parameters 44 3.2.3. Sheet Resistances 45 3.2.4. Contact Resistances 46 3.2.5. Capacitances 47 Gate Oxide Capacitance 47 csandwt 47 Parasitic Capacitances 48 3.2.6. Diode Parameters 49 Protection Diodes 50 3.2.7. Programmable Devices Parameters 51 dzap 51 pfuse 51 3.2.8. Bipolar Electrical Parameters 52 qpv5 52 qpa 52 3.2.9. MOS Varactor Parameters 53 mosvc 53 3.3. ESD Module Parameters 54 3.3.1. Sheet Resistances 54 3.3.2. ESD MOS Electrical Parameters 54 nesd 54 3.4. MIDOX, PMV and NGD Module Parameters 55 3.4.1. Structural and Geometrical Parameters 55 3.4.2. Medium Voltage MOS Electrical Parameters 56 nmv 56 ngmv 57 ngmmv 57 pmv 58 pgmv 59 pgmmv 59 Parasitic Field Parameters 60 3.4.3. High Voltage NMOS Electrical Parameters 61 nhv 61 nhhv 61 3.4.4. Sheet Resistances 62 Process Specification XC06 PS_06_03 Release 3.0 Page 2 Company Confidential 3.4.5. Capacitances 62 Mid-Oxide Capacitance 62 3.4.6. Diode Parameters 63 3.5. DEPL Module Parameters 64 3.5.1. DEPL Electrical Parameters 64 nmvd 64 nhvd 65 nhhvd 65 3.6. PGD Module Parameters 66 3.6.1. Structural and Geometrical Parameters 66 3.6.2. High Voltage Graded PMOS Electrical Parameters 67 pghv 67 pghhv 67 3.6.3. Sheet Resistances 68 3.6.4. Diode Parameters 68 3.6.5. Bipolar Electrical Parameters 69 qnvo 69 qpvh 70 3.7. HVS, HVE, PHVE, ISOMOS and ISOMOSA Module Parameters 71 3.7.1. Structural and Geometrical Parameters 71 3.7.2. Triple Well Isolated MOS Electrical Parameters 72 nmosi 72 nmosia 73 pmosi 74 Parasitic Field Parameters 75 3.7.3. High Voltage PMOS Electrical Parameters 77 phv 77 phva 78 phhv 78 3.7.4. Extended High Voltage MOS Electrical Parameters 79 nhve 79 nhvea 80 nhhve 80 phve 81 phhve 81 phvea 82 ndse 83 ndsea 84 Parasitic Field Parameters 85 3.7.5. High Voltage JFET Electrical Parameters 87 jnfet 87 3.7.6. Sheet Resistances 88 3.7.7. Capacitances 88 csandw 88 3.7.8. Diode Parameters 89 Protection Diodes 93 3.7.9. Bipolar Electrical Parameters 94 qnve 94 qpvhe 95 qpvhea 96 3.8. CAPRES and LINC Module Parameters 97 3.8.1. Structural and Geometrical Parameters...
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This note was uploaded on 01/30/2011 for the course EE 413 taught by Professor Akın during the Fall '10 term at Middle East Technical University.

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processspecfile4DBC6217d01 - X-FAB Semiconductor Foundries...

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