08 - Doping - EECS 320 Doping Doping Intrinsic material...

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EECS 320 Doping J. Phillips EECS 320 Doping Intrinsic material n=p=n i Carrier density is fixed for given material and T We would like to selectively alter n, p Q: How do we alter n, p in a semiconductor? A: Provide substitutional impurity that provides an additional electron or hole.
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J. Phillips EECS 320 Donors Donors – impurity atoms that provide additional electrons. A net concentration of donors provides a higher electron concentration than intrinsic material “n-type” material donor Host, e.g. Si donor Host, e.g. Si “Activated” donor E C E V Donor states Do not confuse with E F ! J. Phillips EECS 320 Acceptors Do not confuse with E F ! Acceptors – impurity atoms that have fewer electrons than semiconductor host A net concentration of acceptors provides a higher hole concentration than intrinsic material “p-type” material acceptor Host, e.g. Si acceptor Host, e.g. Si “Activated” acceptor E C E V Acceptor states
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Activation Energies for Dopants
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08 - Doping - EECS 320 Doping Doping Intrinsic material...

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