12 - PN junction I-V

12 - PN junction I-V - EECS 320 P-N Junction I-V...

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EECS 320 P-N Junction I-V Characteristics J. Phillips EECS 320 Quasi-Fermi Levels Energy band diagram change with applied bias = kT E E n n i fn i exp = kT E E n p fp i i exp = kT E E n n f fn exp 0 = kT E E p p fp f exp 0 a fp fn qV E E = qV bi -qV a E V E C E fn qV a E fp qV bi -qV a E V E C E fn -qV a E fp V a < 0 (reverse bias) V a > 0 (forward bias)
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J. Phillips EECS 320 Applied Bias How will the depletion region charge density, electric field, and potential change with applied bias? Sketch for zero bias, reverse bias, and forward bias J. Phillips EECS 320 Applied Bias – Current Flow E V E C E fn E fp E V E C E fn E fp V a < 0 (reverse bias) V a > 0 (forward bias) In reverse bias, larger barrier for diffusion current In forward bias, lower barrier for diffusion current How is drift current affected by bias?
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J. Phillips EECS 320 Current Flow in P-N Junction (Equilibrium) J. Phillips EECS 320 Current Flow in P-N Junction (Forward Bias)
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J. Phillips
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This note was uploaded on 01/31/2011 for the course EECS 320 taught by Professor Philips during the Spring '06 term at University of Michigan.

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12 - PN junction I-V - EECS 320 P-N Junction I-V...

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