13 - PN non-ideal - EECS 320 P-N Diode: Non-Ideal...

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EECS 320 P-N Diode: Non-Ideal Characteristics J. Phillips EECS 320 R-G In Depletion Region In forward bias, injected carriers recombine in depletion region In reverse bias, carriers generated in depletion region E V E C E fn E fp E V E C E fn E fp How does the I-V relation of the diode change if R-G in depletion region is accounted for?
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J. Phillips EECS 320 R-G Current Significant reverse bias (> few kT/q) Solution not simple, bias-dependent = n p x x G R G R dx t n qA I W qAn I i G R 0 2 τ kT qV i G R A We qAn I 2 0 2 Small forward bias () ( ) 1 1 2 p p n n n np t n n p i G R + + + = J. Phillips EECS 320 R-G In Depletion Region, Reverse Bias i i i n p n n n np G R + + + = 0 2 For traps at E i , τ n = τ p At reverse bias (n, p negligible) 0 2 i n G R = w n q w G R q J i GR 0 2 ) ( = =
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J. Phillips EECS 320 R-G In Depletion Region, Forward Bias () p n e n p n np G R kT qV i A + = + = 0 / 2 0 τ 0 2 / max 2 kT qV i A e n G R = ( ) 1 2 / 0 = kT qV GR GR A e J J ( ) ( ) 1 1 / 0 2 / 0 + = kT qV kT qV GR A A e
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13 - PN non-ideal - EECS 320 P-N Diode: Non-Ideal...

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