16 - Schottky Diode - EECS 320 Metal-Semiconductor...

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EECS 320 Metal-Semiconductor Junction, Schottky Diode J. Phillips EECS 320 Metal-Semiconductor Junctions Metals are used for: Device-level interconnects Component-level interconnects Devices http://www.fibics.com/LargeEELS.html 64 Mbit DRAM X-section Microprocessor Top View
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J. Phillips EECS 320 Metal-Semiconductor Junction E C E V E F E F E vac q φ M E vac E C E V q φ S Metal Semiconductor J. Phillips EECS 320 Band Diagram For Metal-Semiconductor Sketch what you would expect for the band diagram of a metal-semiconductor junction with n-type material and the cases φ M > φ S and φ M < φ S
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J. Phillips EECS 320 Equilibrium Band Diagram E vac qV bi E C E V q χ q φ M q φ B q φ S Charge redistribution near junction, Fermi level flat in equilibrium ρ E d d x qN Q = S d d x qN E ε = max D bi S d qN V x 2 = J. Phillips EECS 320 Built-In Potential () + = = f C M S M bi E E q V 1 χ φ E vac qV bi E C E V q χ q φ M q φ
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This note was uploaded on 01/31/2011 for the course EECS 320 taught by Professor Philips during the Spring '06 term at University of Michigan.

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16 - Schottky Diode - EECS 320 Metal-Semiconductor...

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