18 - MOS - EECS 320 Metal-Oxide-Semiconductor Transistor...

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EECS 320 Metal-Oxide-Semiconductor J. Phillips EECS 320 Transistor Input controls aperture Output = water flow Goal: Control output with small input Analogy: Valve controls water flow Water flow = electron or hole current Valve = channel conductance controlled by electric field Electronics analogy “Off” “On” Valve Controls Flow
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J. Phillips EECS 320 Gates For FETs How do we control conductance of a channel? Insulating n-type (p-type) Gate depletion channel n-type (p-type) Gate Inversion channel Insulator Depletion Inversion Field controls depletion width, channel depth Reverse-bias p-n (JFET) Reverse-bias Schottky (MESFET) Field inverts surface, controls surface charge density Metal-Insulator-Semiconductor (MISFET, MOSFET) J. Phillips EECS 320 Structure Basis for controlling channel charge
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J. Phillips EECS 320 SiO 2 /Si – “Nature’s Choice” Desire: insulator with excellent interface to semiconductor Isolation between gate and semiconductor: voltage control over current flow through inversion layer E G = 9 V ε = 3.9 ε 0 Si/SiO 2 interfaces may be achieved with interface state densities of N=10 11 cm -2 eV -1 (extremely small!) http://www.ibm.com
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18 - MOS - EECS 320 Metal-Oxide-Semiconductor Transistor...

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