19 - MOSFET threshold - EECS 320 MOSFET Threshold MOSFET...

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EECS 320 MOSFET Threshold J. Phillips EECS 320 MOSFET Structure The Idea: Control current flow from source to drain using applied gate voltage Our MOS analysis showed that charge at Si/SiO 2 interface is strongly dependent on V G The resistance from source to drain will vary with this charge in the “channel”
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J. Phillips EECS 320 Band Diagram Cross section in channel Create inversion layer in channel for current conduction J. Phillips EECS 320 More Band Diagrams Band diagram in inversion What does PMOS look like? Band diagram along channel
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J. Phillips EECS 320 Review of Bias Effects - - - - - - - - - + h + h + h + h + h + h + h + - - h + h + - - h + h + e - e - e - e - e - e - e - e - e - e - J. Phillips EECS 320 MOSFET Threshold Voltage Define condition where channel charge is significant ρ M O S q φ F q φ s Define where inversion charge at SiO 2 /Si equal to depletion charge Mathematically, φ S =2 φ F = i A F n N q kT ln φ ox F A S F MS T C N q V φ ε φ φ 4 2 + + = ox F D S F MS T C N q V φ ε φ φ 4 2 =
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