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20 - MOSFET I-V - EECS 320 MOSFET I-V MOSFET Operation...

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EECS 320 MOSFET I-V J. Phillips EECS 320 MOSFET Operation Control current flow between source/drain by gate potential |Q ch | (logscale) φ S 0 Accumulation Flat Band Depletion Inversion
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J. Phillips EECS 320 Band Diagrams J. Phillips EECS 320 Band Diagrams Under Bias
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J. Phillips EECS 320 Drain Current Flow Through Inversion Layer Gate Source Drain n + n + Depletion Inversion layer Pinch off Gate Source Drain n + n + Depletion Inversion layer p-type Low V DS Channel resistance determined by inversion charge, controlled by V GS Depletion width and inversion charge varies along channel at larger V DS Channel pinches off at larger V GS (V DS sat ) J. Phillips EECS 320 Qualitative I-V Characteristics I D V DS V GS Gate Source Drain n + n + Depletion Inversion layer p-type Gate Source Drain n + n + Depletion Inversion layer Pinch off I D V DS V GS linear saturation V DS sat p-type
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J. Phillips EECS 320 I-V Characteristics – Square Law Theory DS DS T GS ox n D V V V V C L W I = 2 µ
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