23 - BJT I-V - EECS 320 Bipolar Junction Transistor I-V...

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EECS 320 Bipolar Junction Transistor I-V Characteristics J. Phillips EECS 320 Minority Carrier Density () + = 1 exp sinh 1 exp sinh sinh ) ( 0 kT qV L x kT qV L x W L W n x n CB b b BE b b b b b b Excess minority carriers in base: (solving minority carrier diffusion equation in steady-state, G=0) Contribution from BE junction Contribution from CB junction Minority carriers in emitter and collector same as p-n diode
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J. Phillips EECS 320 BJT I-V Characteristics Goal: Develop I-V Relations uniform doping, step junction steady state low-level injection no external generation no R-G in depletion regions “long” emitter and collector Similar assumptions to p-n diode analysis Approach: Determine current through solution of minority carrier diffusion equations J. Phillips
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23 - BJT I-V - EECS 320 Bipolar Junction Transistor I-V...

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