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Unformatted text preview: EECS 320 Base-Width Modulation Early effect Base width changes with bias E C B In FA, significant change in collector current with bias Analogous to channel length modulation in FET Early voltage at y-intercept I C V BE V A V CE J. Phillips EECS 320 Base Pushout Kirk Effect At high injection, minority charge in base comparable to B-C space charge E C B B-C depletion region decreased Base width increased Opposite effect of Early effect J. Phillips EECS 320 Breakdown In BJT Punch-through Base fully depleted E C B Diode Reverse Breakdown F r Avalanche Tunneling E V E C E fp E fn-V B I V a...
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- Spring '06