Lec08 Doping - EECS 320 Doping Doping Intrinsic material...

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EECS 320 Doping
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Doping Intrinsic material n=p=n i Carrier density is fixed for given material and T We would like to selectively alter n, p Q: How do we alter n, p in a semiconductor? A: Provide substitutional impurity that provides an additional electron or hole.
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Donors Donors – impurity atoms that provide additional electrons. A net concentration of donors provides a higher electron concentration than intrinsic material “n-type” material E C Donor states E V Do not confuse with E F ! “Activated” donor Host, e.g. Si Host, e.g. Si donor donor
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Acceptors Acceptors – impurity atoms that have fewer electrons than semiconductor host A net concentration of acceptors provides a higher hole concentration than intrinsic material “p-type” material E C Acceptor states E V Do not confuse with E F ! “Activated” acceptor Host, e.g. Si Host, e.g. Si acceptor acceptor
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Activation Energies for Dopants Activation energies are typically shown in reference to the relevant band edge (valence band for acceptors, conduction band for donors) The difference between the donor/acceptor state and the band edge
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Lec08 Doping - EECS 320 Doping Doping Intrinsic material...

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