Lec18 MOS - EECS 320 Metal-Oxide-Semiconductor Gates For...

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EECS 320 Metal-Oxide-Semiconductor
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Gates For FETs How do we control conductance of a channel? Depletion Inversion Insulating n-type (p-type) Gate depletion channel n-type (p-type) Gate Inversion channel Insulator Field controls depletion width, channel depth Reverse-bias p-n (JFET) Reverse-bias Schottky (MESFET) Field inverts surface, controls surface charge density Metal-Insulator-Semiconductor (MISFET, MOSFET)
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Structure Basis for controlling channel charge
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SiO 2 /Si – “Nature’s Choice” Desire: insulator with excellent interface to semiconductor Isolation between gate and semiconductor: voltage control over current flow through inversion layer http://www.ibm.com E G = 9 eV SiO 2 : ε = 3.9 ε 0 Si/SiO 2 interfaces may be achieved with interface state densities of N=10 11 cm -2 eV -1 (extremely small!)
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Thermal Oxidation Oxidation of silicon is controllable down to atomic layers “Wet” or “dry” thermal oxidation Selective oxidation useful for device integration
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Lec18 MOS - EECS 320 Metal-Oxide-Semiconductor Gates For...

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