Lec20 MOSFET I-V - EECS 320 MOSFET I-V MOSFET Operation...

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EECS 320 MOSFET I-V
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MOSFET Operation Control current flow between source/drain by gate potential |Q ch | (logscale) Accumulation Flat Band Depletion Inversion 0 φ S
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Band Diagrams
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Band Diagrams Under Bias y
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Drain Current Flow Through Inversion Layer Gate Source Drain n + n + Depletion Inversion layer p-type Low V DS Channel resistance determined by inversion charge, controlled by V GS Gate Source Drain n + n + Depletion Inversion layer Pinch off Depletion width and inversion charge varies along channel at larger V DS Channel pinches off at larger V DS (V DS sat )
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Qualitative I-V Characteristics Gate I D V DS V GS Source Drain n + n + Depletion Inversion layer p-type I D V DS V GS linear saturation V DS sat Gate Source Drain n + n + Depletion Inversion layer Pinch off p-type
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I-V Characteristics – Square Law Theory L DS DS T GS ox n D V V V V C L Z I = 2 µ Calculate I D Determining Channel Charge (Drift current only) SD Z G Gate Source Drain N A n + n + y x () = DS V T GS ox n D dV V V V C L Z I 0 ) ( ) ( y v y ZQ I n D = dy y dV y y v n n ) ( ) ( ) ( = = E ) ( y dV Q Z dy I n n D = ) ( y V V V C Q T GS ox n = Includes variation of inversion layer charge with V DS
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I-V Characteristics – Saturation Linear Saturation DS DS T GS ox n D V V V V C L W I
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This note was uploaded on 01/31/2011 for the course EECS 320 taught by Professor Philips during the Spring '06 term at University of Michigan.

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Lec20 MOSFET I-V - EECS 320 MOSFET I-V MOSFET Operation...

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