Lec22 BJT I-V - MOSFET I-V Recap Develop one I-V model...

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MOSFET I-V Recap Develop one I-V model dividing into linear, saturation, and velocity saturation operation G SD I D () DS T GS ox lf D V V V V V L W C I λ µ + = 1 2 min min L v V lf sat DSsat ( ) DSsat DS T GS V V V V V , , min min = Excellent analytical expression for MOSFET I-V for first-order calculations, commonly used in digital design (EECS 312) V min = V DS : linear V min = V GS -V T : saturation V min = V DSsat : velocity sat The above is for NMOS, what changes for PMOS?
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I-V Characteristics – Square Law Model Linear Saturation DS DS T GS ox n D V V V V C L W I = 2 µ () 2 2 T GS ox n D V V C L W I = T GS DS V V V > T GS DS V V V < I D V DS V GS linear saturation V DS sat
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MOSFET Example PMOS Z/L=10 V T = -1V μ p = 300 cm 2 V -1 s -1 5 V V in V out = ? NMOS Z/L=5 V T = 1V μ n = 600 cm 2 V -1 s -1 C ox are the same for both transistor
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MOSFET Scaling
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High-k
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EECS 320 Bipolar Junction Transistor I-V Characteristics
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Minority Carrier Density Excess minority carriers in base:
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Lec22 BJT I-V - MOSFET I-V Recap Develop one I-V model...

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