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Unformatted text preview: EECS 320 Midterm #2, Review Outline PN diode MS junction • Electrostatics • Ideal Diode IV • Nonideal, transient • Optoelectronic devices • Schottky diode • M/S contact Electrostatics Use Poisson’s equation to quantify space charge region ε ρ − = 2 2 dx V d Electrostatics N DN A P N x P N V bi E V E C E F ρ x P A N D x N x N = ⎟ ⎟ ⎠ ⎞ ⎜ ⎜ ⎝ ⎛ = 2 ln i A D bi n N N q kT V F x ⎟ ⎟ ⎠ ⎞ ⎜ ⎜ ⎝ ⎛ + = D A D A bi bi N N N N q V V W ε 2 ) ( PN Junction with Applied Voltage V A V bi> V biV A qV biqV A E V E C E fnqV a E fp qV biqV A E V E C E fn qV a E fp V A > 0 (forward bias) V A < 0 (reverse bias) ⎟ ⎟ ⎠ ⎞ ⎜ ⎜ ⎝ ⎛ + − = D A D A A bi bi N N N N q qV V V W ) ( 2 ) ( ε Electrostatics PN Junction in Forward Bias (V A >0) Current flow is proportional to e (qV A /kT) due to the exponential increase of carriers in the majority carrier bands PN Junction in Reverse Bias (V A <0) Reverse current caused by minority carriers being swept away by E , and independent of the size of V A Ideal Diode IV...
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This note was uploaded on 01/31/2011 for the course EECS 320 taught by Professor Philips during the Spring '06 term at University of Michigan.
 Spring '06
 Philips
 Statics

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