Unformatted text preview: i for Si of 1.08 x 10 10 /cm 3 ). 2. Plot the diode current, I D , (in mA) versus the diode voltage, V D , (in V) for a pn junction described by the I-V expression I D = I S exp(V D /V T ) where I S = 5 x 10-17 A = 5 x 10-14 mA and V T = 26 mV (thermal voltage at room temperature) Let V D range from 0 to 800 mV....
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- Spring '08
- Volt, room temperature, pn junction, intrinsic electron concentration, following doping levels