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# HW_ 2 - i for Si of 1.08 x 10 10/cm 3 2 Plot the diode...

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EE438 - Homework #2 1. Compute the “built-in voltage” V bi for a pn junction at thermal equilibrium at room temperature for the following doping levels: (a) N A = N D = 10 13 /cm 3 (b) N A = N D = 10 15 /cm 3 (c) N A = N D = 10 17 /cm 3 Note that the intrinsic electron concentration in Si at thermal equilibrium at room temperature is n i = 1.45 x 10 10 /cm 3 (Your textbook erroneously gives a value for n
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Unformatted text preview: i for Si of 1.08 x 10 10 /cm 3 ). 2. Plot the diode current, I D , (in mA) versus the diode voltage, V D , (in V) for a pn junction described by the I-V expression I D = I S exp(V D /V T ) where I S = 5 x 10-17 A = 5 x 10-14 mA and V T = 26 mV (thermal voltage at room temperature) Let V D range from 0 to 800 mV....
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