EE3114 Hwk 3 MOSFET Assignment

# EE3114 Hwk 3 MOSFET Assignment - analysis type “DC...

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EE3114 Electronics I Homework #3 MOSFET Assignment Due 1 Week 1) Textbook Problem 3.1 2) Textbook Problem 3.5 3) Textbook Problem 3.10 4) OrCAD SIMULATION: Using OrCAD or another PSpice simulator, create a circuit that can plot the I V characteristics of an NMOS enhancement mode transistor. The plot should be similar to Figure 3 10 in your textbook but without the dotted line for v DS,SAT . Use the VN2222 MOSFET or similar model for the transistor. The Gate and Drain voltage inputs will be a voltage source such as the “VSRC” found in the EVALAA library of OrCAD. The following schematic shows an example. S Q1 VN2222 V1 AC = TRAN = DC = 5v 0 0 0 VG AC = TRAN = DC = 3v The I V characteristic requires that the voltage sources sweep over a range of values. When using the OrCAD PSpice simulator, set the PSpice Simulation Profile from within Capture to the

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Unformatted text preview: analysis type “DC Sweep”. Set the “Primary Sweep” to a Voltage Source with the name of the drain voltage source, V1 in this case. The drain voltage will use a linear sweep type over the range of 0 to 5V in 0.1V increment. Set a “Secondary Sweep” to a voltage source with the name of the gate source, VG in this case. The gate voltage will use the “Value List” sweep type. The listed gate voltages are 0, 3.0, 3.5, 4.0, 4.5, 5.0V. If you are using a different PSpice simulator, you can step the gate voltages over a comparable range from 0 to 5 volts. EE3114 Electronics I Homework #3 MOSFET Assignment Due 1 Week Submit the I ‐ V plot and a copy of your schematic....
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## This note was uploaded on 02/02/2011 for the course EE 3114 taught by Professor Moon during the Fall '10 term at NYU Poly.

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EE3114 Hwk 3 MOSFET Assignment - analysis type “DC...

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