M216A_1_Midterm-216A-F08-Sol

M216A_1_Midterm-216A-F08-Sol - University of California Los...

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EEM216A: FALL 08—MIDTERM 1 University of California, Los Angeles Henry Samueli School of Engineering and Applied Science Department of Electrical Engineering D. Markovic Mon Wed 2:00 3:50pm Friday (Nov 7), 2:00 3:50pm EEM216A: FALL 08—MIDTERM NAME Last First SID Please write answers in the box provided. Answers elsewhere will not be graded. Problem 1 _____/20 Problem 2 _____/10 (Review) Problem 3 _____/10 (Review) Problem 4 _____/10 Problem 5 _____/10 Total (60) You have 110 minutes. The test is designed so that you roughly spend 1.5 minutes per point + 20 minutes to check your answers. Budget your time properly. If you get stuck, move on… Good luck! 10 20 30 40 50 60 70 80 90 100 0 5 10 15 percentage score number of students EEM216A, Fall 2008, Midterm Total scores µ = 50.5 % σ = 11.2 % max = 75.0 % min = 25.0 % (36 students)
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EEM216A: FALL 08—MIDTERM 2 0 20 40 60 80 100 0 5 10 15 20 25 30 percentage score number of students EEM216A, Fall 2008, Midterm Problem 1 µ = 51.0 % σ = 19.6 % max = 85.0 % min = 10.0 % (36 students) PROBLEM 1: Charge Sharing (20 pts) The figure below shows a domino gate. You need to calculate the effect of charge sharing. All inputs are driven from other domino gates and only one input can switch during evaluation. Assume C diff = C gate = 2 fF/ µ m. Let V DD = 1V, µ n / µ p = 2, V TP = 0.2V, V TN = 0.2V, unit/reference inverter W p / W n = 2 µ m / 1 µ m. A D V DD Clk B C Clk F X c. Given the relative transistor sizes from (b) and keeping the transistor sizes parameterized (e.g.
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This note was uploaded on 02/06/2011 for the course EE M216A taught by Professor Marković during the Spring '08 term at UCLA.

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M216A_1_Midterm-216A-F08-Sol - University of California Los...

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