P2N2222A-D

P2N2222A-D - P2N2222A Amplifier Transistors NPN Silicon...

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© Semiconductor Components Industries, LLC, 2006 March, 2006 Rev. 3 1 Publication Order Number: P2N2222A/D P2N2222A Amplifier Transistors NPN Silicon Features Pb Free Packages are Available* MAXIMUM RATINGS (T A = 25 ° C unless otherwise noted) Characteristic Symbol Value Unit Collector Emitter Voltage V CEO 40 Vdc Collector Base Voltage V CBO 75 Vdc Emitter Base Voltage V EBO 6.0 Vdc Collector Current Continuous I C 600 mAdc Total Device Dissipation @ T A = 25 ° C Derate above 25 ° C P D 625 5.0 mW mW/ ° C Total Device Dissipation @ T C = 25 ° C Derate above 25 ° C P D 1.5 12 W mW/ ° C Operating and Storage Junction Temperature Range T J , T stg 55 to +150 ° C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient R q JA 200 ° C/W Thermal Resistance, Junction to Case R q JC 83.3 ° C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. TO 92 (T0 226AA) CASE 29 11 STYLE 17 MARKING DIAGRAM http://onsemi.com (Note: Microdot may be in either location) 1 2 3 P2N2 222A AYWW G G P2N2 = Device Code 222A = Specific Device A = Assembly Location Y = Year WW = Work Week G = Pb Free Package P2N2222ARL1 TO 92 5000 Units / Bulk P2N2222ARL1G TO 92 (Pb Free) 5000 Units / Bulk Device Package Shipping P2N2222A TO 92 2000 / Tape & Ammo P2N2222AG TO 92 (Pb Free) 2000 / Tape & Ammo ORDERING INFORMATION COLLECTOR 1 2 BASE 3 EMITTER P2N2222AZL1 TO 92 P2N2222AZL1G TO 92 (Pb Free) 2000 / Tape & Reel 2000 Units / Tube †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
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P2N2222A http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (I C = 10 mAdc, I B = 0) V (BR)CEO 40 Vdc Collector Base Breakdown Voltage (I C = 10 m Adc, I E = 0) V (BR)CBO 75 Vdc Emitter Base Breakdown Voltage (I E = 10 m Adc, I C = 0) V (BR)EBO 6.0 Vdc Collector Cutoff Current (V CE = 60 Vdc, V EB(off) = 3.0 Vdc) I CEX 10 nAdc Collector Cutoff Current (V CB
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P2N2222A-D - P2N2222A Amplifier Transistors NPN Silicon...

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