This preview shows pages 1–3. Sign up to view the full content.
This preview has intentionally blurred sections. Sign up to view the full version.View Full Document
Unformatted text preview: Semiconductor Components Industries, LLC, 2004 September, 2004 - Rev. 5 1 Publication Order Number: 2N6071/D 2N6071A/B Series Preferred Device Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. Features • Pb-Free Package is Available* • Sensitive Gate Triggering Uniquely Compatible for Direct Coupling to TTL, HTL, CMOS and Operational Amplifier Integrated Circuit Logic Functions • Gate Triggering: 4 Mode - 2N6071A, B; 2N6073A, B; 2N6075A, B • Blocking Voltages to 600 V • All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability • Small, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability • Device Marking: Device Type, e.g., 2N6071A, Date Code *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. TRIACS 4.0 A RMS, 200 - 600 V Preferred devices are recommended choices for future use and best overall value. TO-225 CASE 077 STYLE 5 1 2 3 MT1 G MT2 See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ORDERING INFORMATION x = 1, 3, 5 y = A, B Y = Year WW = Work Week MARKING DIAGRAM YWW 2N 60xy REAR VIEW SHOW TAB 1. MT1 2. MT2 3. Gate http://onsemi.com 2N6071A/B Series http://onsemi.com 2 MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted) Rating Symbol Value Unit *Peak Repetitive Off-State Voltage (Note 1) (T J = * 40 to 110 ° C, Sine Wave, 50 to 60 Hz, Gate Open) 2N6071A,B 2N6073A,B 2N6075A,B V DRM, V RRM 200 400 600 V *On-State RMS Current (T C = 85 ° C) Full Cycle Sine Wave 50 to 60 Hz I T(RMS) 4.0 A *Peak Non-repetitive Surge Current (One Full cycle, 60 Hz, T J = +110 ° C) I TSM 30 A Circuit Fusing Considerations (t = 8.3 ms) I 2 t 3.7 A 2 s *Peak Gate Power (Pulse Width ≤ 1.0 m s, T C = 85 ° C) P GM 10 W *Average Gate Power (t = 8.3 ms, T C = 85 ° C) P G(AV) 0.5 W *Peak Gate Voltage (Pulse Width ≤ 1.0 m s, T C = 85 ° C) V GM 5.0 V *Operating Junction Temperature Range T J-40 to +110 ° C *Storage Temperature Range T stg-40 to +150 ° C Mounting Torque (6-32 Screw) (Note 2)- 8.0 in. lb. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected....
View Full Document
This note was uploaded on 02/08/2011 for the course EE 459L taught by Professor Weber during the Spring '11 term at USC.
- Spring '11