20085ee115C_1_hw_1

20085ee115C_1_hw_1 - EE115C Homework #1 Due Date 10/15/2008...

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EE115C – Homework #1 Due Date 10/15/2008 (in class) Problem #1 (a) Using Spectre, generate the family of I-V curves ( help : online Tutorial 1 has detailed instructions on how to do this) for a PMOS transistor with the following parameters: W/L = 1 µ m/100nm Sweep V SD from 0V to 1V in 50mV increments V SG = 0.4V, 0.5V, 0.7V, 1.0V V BS = 0V, 0.5V Use the 90nm model as instructed in Tutorial 1 (from EEWeb > Online Laboratory), use section NN in the transistor model. Plot all I-V curves on one graph and label bias conditions for V SG and V BS . (b) Repeat the simulation for W/L = 3 µ m/300nm Problem #2 Assume the following characteristics for the transistor: µ n C ox =125 µ A/V 2 , λ =0.5V -1 , L eff =50nm, V TN =0.2V, V DD =1.0V, E cn =6V/ µ m in your hand calculations. Three different transistor configurations are shown below with the drawn sizes as shown. (a) For each of the configurations, use Spectre to simulate the current through the device(s) with V G =V OUT =V DD . (b) For each of the configurations, determine the current through the device.
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This note was uploaded on 02/09/2011 for the course EE 115C taught by Professor N/a during the Spring '10 term at UCLA.

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20085ee115C_1_hw_1 - EE115C Homework #1 Due Date 10/15/2008...

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