Ass5 Sol - Aan+qan + S wJ /cr. \-J I 'A.g^f-"^ . (^)...

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/cr. \-J I Aan+qan wJ + S 'A.g^f-""^ . (^) F^$^ ft-r- crq c.ei^ ,u-"$ t(VU * o) ;1'o * F* Vp---3,6V cJ (%:g,5qu) : to{F arv')# zy?rd,Yr- " r.1,1df_ Q=t fra-,- v&r 1,5 v q - Vr!^"( W u'L'^^ tJ*=t'/o #="L(M:) == S.ea(#)-- / . I Ft l ) 2xVo | 2- zKa'rtbb fuJol,'*,t,c-{ t ; ; F/* *), NA; ; *h.* t;i "{4-"" hf,-- d,.4n- ,r.h^ at-*, ,r *^"t.] A, \OE X,dC^^t=\o5rtitxtrtf w,t 5:\,rE tnu,tL' (pt^.,e<,o"'llc'^= to$;^^) cr A s, a e , {n9 h*tx \,0\ t'-{L Flry-*to b 1*o x't4d3f- jo= A1r.i:,)\,.Jr ^ A', = {o9[wtx \'o)to]tFlc^^' \Jr., *f -T ou.l&n :-:w A *{,tf \o t'a = q.11o'f^k*^- l; {Y !
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gfi Schottky diodes Schottky diodes rr" .oilrtrrcted of a meta!-to-N junction rather than a P-N semiconductor junction. Schottky diodes are characterized by fast switching times (low reverse-recovery time: see below *1, low forward voltage drop, Ve (typically 0.25 to 0.4 volts for a metal-silicon junction), and low capacitance C;. The schematic symbolfor a Schottky diode is shown here: Sctmffky diode In terms of forward voltage drop {Vo}, reverse-recovery time (trr), and (Cr), diodes are well suited for high-frequency applications (we will study latter why capacitors will limit the frequency of operation of our circuits). The most evident
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Ass5 Sol - Aan+qan + S wJ /cr. \-J I 'A.g^f-&quot;^ . (^)...

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