Practice DC analysis MOS

Practice DC analysis MOS - P racticeP rqblems:D CA nalvsisM...

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Practice Prqblems: DC Analvsis MOS transistor (NMOS and PMOS) - In all the following problems consider ro=oo (1. = 0), Kn=F nCo*, and Kp=PpCo*. - lf the transistor is in triode region do not simplify the current lp equation. - Also recall that for MOS transistor active region is also called saturation region. QL- Consider an NMOS transistor with to"= 20nm, Frn = 550 cm'/V.s, Vt = 0.8V, and W/L=10. The permittivity of the silicon oxide eo" is 3.45xLO-LLt/m. Find the drain current lo in the following cases: a) Vcs =5V and Vp5 =0.2V. b) Ves= 5V dnd Vp5 =/Y. Q2- A particular NMOS transistor for which Vt =1V and k'n(WL)=0.1mA/V' is to be operated in saturation region. a) lf fo is to be 0.2mA, find the required V65 and the minimum required Vp5. Q3- Consider a PMOS transistor with k'p(WL)=80pA/V2, and lVt l=
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This note was uploaded on 02/12/2011 for the course ECED 3201 taught by Professor Al-sankary during the Spring '11 term at Dalhousie.

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Practice DC analysis MOS - P racticeP rqblems:D CA nalvsisM...

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