This preview shows pages 1–2. Sign up to view the full content.
This preview has intentionally blurred sections. Sign up to view the full version.
View Full Document
Unformatted text preview: n C ox = 120 A/V 2 , V t = 1V, and L 1 =L 2 = 1 m. Find the required values of gate width, W, for each of Q 1 and Q 2 , and the value of R, to obtain the voltage and current values indicated. Fig.1 5 Consider the biasing circuit shown in Fig. 2, using V DD = 15V. For the NMOS transistor, V t =1.2 V and k n = 80 A/V 2 , W=240 m, and L=6 m. Arrange that the drain current is 2mA, with onethird of the supply voltage across each of R S and R D . Use R G1 =22M . a) Suppose that the transistor is the active region (remember it is also called saturation region for MOS transistor), Find the values of R G2 , R S and R D . b) Check that your transistor is indeed in saturation region. Fig. 2 Due date: Nov. 26, 2007. Late submission will not be accepted....
View
Full
Document
This note was uploaded on 02/12/2011 for the course ECED 3201 taught by Professor Alsankary during the Spring '11 term at Dalhousie.
 Spring '11
 ALSankary

Click to edit the document details