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assig6qsns

assig6qsns - n C ox = 120 A/V 2 V t = 1V and L 1 =L 2 = 1 m...

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ECED3201: Introduction to Electronics Fall 2007 Dalhousie University, Department of Electrical and computer Engineering Assignments #6 In all the following problems neglect r o (r o = ). 1- Consider an NMOS transistor with t ox = 20nm, n = 650 cm 2 /V.s, V t = 0.8V, and W/L=10. The permittivity of the silicon oxide ox is 3.45x10 -11 F/m. Find the drain current I D in the following cases: a) V GS =5V and V DS =0.2V. b) V GS =V DS =5V. 2- A particular NMOS transistor for which V t =1V and k’ n (W/L)=0.1mA/V 2 is to be operated in saturation region. a) If I D is to be 0.2mA, find the required V GS and the minimum required V DS . 3- Consider a PMOS transistor with k’ p (W/L)=80 A/V 2 , and |V t |= 1.5V. The gate of the transistor is connected to ground and the source to +5V. Find the drain current I D in the following cases: a) V D =3V. b) V D = 0V. 4- The NMOS transistors in the circuit of Fig.1 have

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Unformatted text preview: n C ox = 120 A/V 2 , V t = 1V, and L 1 =L 2 = 1 m. Find the required values of gate width, W, for each of Q 1 and Q 2 , and the value of R, to obtain the voltage and current values indicated. Fig.1 5- Consider the biasing circuit shown in Fig. 2, using V DD = 15-V. For the NMOS transistor, V t =1.2 V and k’ n = 80 A/V 2 , W=240 m, and L=6 m. Arrange that the drain current is 2mA, with one-third of the supply voltage across each of R S and R D . Use R G1 =22M Ω. a) Suppose that the transistor is the active region (remember it is also called saturation region for MOS transistor), Find the values of R G2 , R S and R D . b) Check that your transistor is indeed in saturation region. Fig. 2 Due date: Nov. 26, 2007. Late submission will not be accepted....
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assig6qsns - n C ox = 120 A/V 2 V t = 1V and L 1 =L 2 = 1 m...

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