This preview shows pages 1–2. Sign up to view the full content.
This preview has intentionally blurred sections. Sign up to view the full version.View Full Document
Unformatted text preview: n C ox = 120 A/V 2 , V t = 1V, and L 1 =L 2 = 1 m. Find the required values of gate width, W, for each of Q 1 and Q 2 , and the value of R, to obtain the voltage and current values indicated. Fig.1 5- Consider the biasing circuit shown in Fig. 2, using V DD = 15-V. For the NMOS transistor, V t =1.2 V and k n = 80 A/V 2 , W=240 m, and L=6 m. Arrange that the drain current is 2mA, with one-third of the supply voltage across each of R S and R D . Use R G1 =22M . a) Suppose that the transistor is the active region (remember it is also called saturation region for MOS transistor), Find the values of R G2 , R S and R D . b) Check that your transistor is indeed in saturation region. Fig. 2 Due date: Nov. 26, 2007. Late submission will not be accepted....
View Full Document
This note was uploaded on 02/12/2011 for the course ECED 3201 taught by Professor Al-sankary during the Spring '11 term at Dalhousie.
- Spring '11