RelativeResourceManager;JSESSIONID=TT8PH8kRHSh3nFpNf5TDTKZdhGr42phqf6yHN9np6ZhCJmXJkHXv!1806407919!i

# RelativeResourceManager;JSESSIONID=TT8PH8kRHSh3nFpNf5TDTKZdhGr42phqf6yHN9np6ZhCJmXJkHXv!1806407919!i

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ECED3201: Introduction to Electronics Fall 2007 Dalhousie University, Department of Electrical and computer Engineering Assignments #6 In all the following problems neglect r o (r o = ). 1- Consider an NMOS transistor with t ox = 20nm, n = 650 cm 2 /V.s, V t = 0.8V, and W/L=10. The permittivity of the silicon oxide ox is 3.45x10 -11 F/m. Find the drain current I D in the following cases: a) V GS =5V and V DS =0.2V. b) V GS =V DS =5V. 2- A particular NMOS transistor for which V t =1V and k’ n (W/L)=0.1mA/V 2 is to be operated in saturation region. a) If I D is to be 0.2mA, find the required V GS and the minimum required V DS . 3- Consider a PMOS transistor with k’ p (W/L)=80 A/V 2 , and |V t |= 1.5V. The gate of the transistor is connected to ground and the source to +5V. Find the drain current I D in the following cases: a) V D =3V. b) V D = 0V. 4- The NMOS transistors in the circuit of Fig.1 have

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## This note was uploaded on 02/12/2011 for the course ECED 3201 taught by Professor Al-sankary during the Spring '11 term at Dalhousie.

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