ELET2420_tUTORIAL_1 - i (Si). e) T = 650 K, N a = 0, N d =...

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1. Determine the equilibrium electron and hole concentration inside a uniformly doped sample of Si under the following conditions: a) T = 300 K, N a << N d , N d = 10 15 /cm 3 b) T = 300 K, N d << N a , N a = 10 16 /cm 3 c) T = 300 K, N a = 9 x 1015 cm-3, N d = 10 16 /cm 3 (refer to p. 60 of prescribed text) d) T = 450 K, N a = 0, N d = 10 14 /cm 3 (refer to p. 54 of prescribed text to find n
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Unformatted text preview: i (Si). e) T = 650 K, N a = 0, N d = 10 14 /cm 3 (refer to pps. 60 &amp; 64 of prescribed text. 2. For each of the conditions specified in problem (1), determine the position of E i and compute E F – E i . Note E G (Si) = 1.08 eV at 450 K and 1.015 eV at 650 K....
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This note was uploaded on 02/23/2011 for the course ELETRONICS P24L taught by Professor Learymyers during the Spring '11 term at University of the West Indies at Mona.

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