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10 Radiative Recombination

10 Radiative Recombination - Radiative EE47410...

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Radiative Recombination EE 47410
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Radiative Recombination S mi d t li ht mitti d i s Semiconductor light emitting devices rely on recombination of electrons and holes in the product of the recombination is the emission of a E c photon. Radiative recombination events E v conserve energy and momentum. Thus direct band gap materials are preferred materials in which to build light emitting devices because E conservation of momentum occurs without the involvement of a momentum conserving entity such as a h Th i f di ti k phonon. The inverse of radiative recombination is absorption of a photon by the generation of an electron-hole pair E E h , e h e photon e h k k hk k 
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E c E E v k Because momentum is easily conserved in a direct bandgap material, absorption processes (generation) are stronger in these materials, as well. At equilibrium, recombination and generation are in balance and the rates at which electrons and holes are generated equals the rate at which they recombine, resulting in a steady state equilibrium concentrations of electrons and holes resulting in a steady state equilibrium concentrations of electrons and holes, n o and p o . For undoped , intrinsic material n o = p o = n i . However, it is also true that the product n o p o = n i 2 for intrinsic and extrinsic material alike.
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