CMOS-1-Solved

CMOS-1-Solved - CMOS -1 1) 2) Grow pad oxide (200~500) Mask...

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CMOS -1
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1) Grow pad oxide (200~500Å) 2) Mask #1 for buried p+ region. B+ implant. E = 150 KeV. Does = 2-4 *10 15 cm -2 3) Remove PR. 4) Annealing and etch pad oxide. 5) Mask #2 to define trench isolation area.
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6) Anisotropic dry etch. And remove PR. 7) Dry oxidation for 1 hr at 1100 ℃ N Sub SiO2 P+ 8) Deposit poly silicon by LPCVD.
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9) CMP SiO2 P+ Pol -y Si Pol -y Si N Sub 10) Mask #3 to remove part of the top SiO2 layer using anisotropic etching. 11) Mask #4 to define p- region. B + implant. E = 50~75 KeV. Dose = 1*10 13 cm -2 P+ Pol -y Si Pol -y Si SiO2 SiO2 PR PR PR P- P- Boron SiO2
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12) Mask #5 to define n- region in p- region. As + implant. E = 50 KeV. Dose = 2 * 10 13 cm -2 13) RTA and grow thermal oxide by dry oxidation for 0.5 hr at 1100℃ 14) Mask #6 to deposit gate metal. Deposit Ti by sputtering in N2 ambient to form TiN.
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This note was uploaded on 02/23/2011 for the course EE 474 taught by Professor Lingo during the Spring '11 term at USC.

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CMOS-1-Solved - CMOS -1 1) 2) Grow pad oxide (200~500) Mask...

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