CMOS-3-Solved

17usemask8toformthewindowforsio2ontheleftedgefollowedb

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Unformatted text preview: gion. Page 6 of 12 15. Use ion implantation with Boron (Energy = 50 KeV, Dose = 1‐5 x 1016 cm‐2) to form the P++ region. 16. Use mask# 7 to form the window for SiO2 on the right edge followed by anisotropic etching. 17. Use mask# 8 to form the window for SiO2 on the left edge followed by anisotropic etching. Page 7 of 12 18. Deposit SiO2 by LPCVD. 19. Use CMP to get rid of the unwanted SiO2 on the surface. Page 8 of 12 20. Use mask# 9 and anisotropic etching for the deposition of SiGe. 21. Deposit SiGe using LPCVD. 22. Perform CMP. Page 9 of 12 23....
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