Unformatted text preview: Deposit a thin layer of gate oxide. 24. Using mask# 10 selectively etch the gate oxide. 25. Deposit SiO2 by LPCVD. Page 10 of 12 26. Use masks #11, #12 to do a controlled etching of SiO2. 27. Deposit poly silicon by LPCVD (An unmasked P or As implant of dose of around 5 x 1015 cm‐2. 28...
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This note was uploaded on 02/23/2011 for the course EE 474 taught by Professor Lingo during the Spring '11 term at USC.
- Spring '11