CMOS-3-Solved

Usingionimplantationwithboronenergy150200kevdose1013cm

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Unformatted text preview: region. 8. Use mask# 3 to form the window for the P region. Page 4 of 12 9. Using ion implantation with Boron (Energy = 150‐200 KeV, Dose = 1013 cm‐2) form the P region. 10. Use mask# 4 to form a window for the P++ region. 11. Use ion implantation with Boron (Energy = 100‐150 KeV, Dose = 1‐5 x 1016 cm‐2) to form the P++ region. Page 5 of 12 12. Use mask# 5 to form a window for the n‐ region. 13. Use ion implantation with Phosphorus (Energy = 75‐100 KeV, Dose = 1‐5 x 1013 cm‐2) to form the n‐ region. 14. Use mask# 6 to form a window for the P++ re...
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This note was uploaded on 02/23/2011 for the course EE 474 taught by Professor Lingo during the Spring '11 term at USC.

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