CMOS-4-solved

CMOS-4-solved - CMOS 4 1. Grow a thin masking oxide (500 )...

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CMOS – 4 1. Grow a thin masking oxide (500 Ǻ ) using wet oxidation. 2. Use Mask #1 to open a window for the n+ buried layer. Do Phosphorous ion implantation (E = 400 keV, dose = 2-5×10 15 cm -2 ). 3. Remove the photoresist, and do a long drive-in, high temperature diffusion (4-6 hours at 1100 ºC) to push the n+ layer into the substrate. 4. Use Mask #2 to open a window for the p buried layer. Do Boron ion implantation (E = 300 keV, dose = 5×10 14 cm -2 ). 5. Remove the photoresist, and do a drive-in diffusion to push the p layer into the substrate.
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6. Use Mask #3 to open a window for the n buried layer. Do Phosphorous ion implantation (E = 300 keV, dose = 5×10 14 cm -2 ). 7. Remove the photoresist, and do a drive-in diffusion to push the n layer into the substrate. 8. Use Mask #4 to open a window for the second n+ buried layer. Do Phosphorous ion implantation (E = 150 keV, dose = 2-5×10 15 cm -2 ).
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Remove the photoresist. 10. Use Mask #5 to open a window for the second p buried layer. Do Boron ion implantation (E = 300 keV, dose = 5×10 14 cm -2 ). 11. Remove the photoresist. 12. Use Mask #6 to open a window for the p+ buried layer. Do Boron ion implantation (E = 300 keV, dose = 2-5×10 15 cm -2 ). 13.
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CMOS-4-solved - CMOS 4 1. Grow a thin masking oxide (500 )...

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