Week-4-SiO2-I

Week-4-SiO2-I - EE-504L :Solid State Processing and...

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Unformatted text preview: EE-504L :Solid State Processing and Integrated Circuit LaboratoryDr. Kian Kavianisieh Ming Dept of ElectricalHsieh Ming Dept. of Electrical EngineeringUniversity of Southern CaliforniaViterbi School of Engineering1/3/2011Dr. Kian Kaviani EE-504L, Spring 20111hermal Oxidation ofThermal Oxidation of iliconSilicon1/3/2011Dr. Kian Kaviani EE-504L, Spring 20112Properties of SiO2 SiO2 and Si/SiO2 interface are the principal reasons for silicons dominance in the IC industry. Some of the properties that istinguishes SiO2 from other insulators are:distinguishes SiO2 from other insulators are: Easily and selectively etches using lithographyasks most common Impurities (B P As Sb) Masks most common Impurities (B, P, As, Sb) Excellent insulator High breakdown fieldxcellent junction passivationExcellent junction passivation Stable bulk electrical properties Stable and reproducible interface with Si1/3/2011Dr. Kian Kaviani EE-504L, Spring 20113SiO2 : Range of Applications1/3/2011Dr. Kian Kaviani EE-504L, Spring 20114roperties of Thermal OxideProperties of Thermal Oxideensity27 gm /m3Density2.27 gm / cm3Melting Point1700 CVapor PressureE-3 Torr at 1450 CThermal Conductivity0.014 watt /cm - CLinear Coefficient of Expansion5 X 10E-6 Cm/ CResistivity5 x 10 E8 cm Dielectric Constant3.9nergy Gap8 eVEnergy Gap~ 8 eVOxygen Solubility5.5 x 10E20 / cm3 at 1000 CWater Solubility.5 x 10E16 m3t 1000 1/3/2011Dr. Kian Kaviani EE-504L, Spring 20115a e So ub y3 56 /c 3a000 Casic Structure of SiO2Basic Structure of SiO21/3/2011Dr. Kian Kaviani EE-504L, Spring 20116hermal Oxidation of SiliconThermal Oxidation of Silicon1/3/2011Dr. Kian Kaviani EE-504L, Spring 20117The Deal Grove Model for Thermal Oxidation of silicon (Linear Parabolic Model)Flux : Number of atoms or molecules crossing a unit area in a unit timeF1 : Oxidizing species moving from the bulk of the gas phase to the gas/oxide interface.2 :xidizing species diffusing through the existing oxide to the SiF2 :Oxidizing species diffusing through the existing oxide to the Si /SiO2 interface.F3 :Oxidizing species consumed by the reaction at the Si / SiO2 In the Steady State:F1 = F2 = F3F1F2F3x01/3/2011Dr. Kian Kaviani EE-504L, Spring 20118The Deal Grove Model for Thermal Oxidation of silicon (Linear Parabolic Model)1/3/2011Dr. Kian Kaviani EE-504L, Spring 20119iO2SiO21/3/2011Dr. Kian Kaviani EE-504L, Spring 201110The Deal Grove Model for Thermal Oxidation of silicon (Linear Parabolic Model)1/3/2011Dr. Kian Kaviani EE-504L, Spring 201111The Deal Grove Model for Thermal Oxidation of silicon (Linear Parabolic Model)Special Cases:1)t > x^2 ~ B t (Long Oxidation Time)here: B :arabolic Rate Constantwhere: B : Parabolic Rate ConstantGrowth rate is limited by arrival of oxidizing species diffusing through the thick SiO2 film2) t < )x ~ (B/A) (t + )Short Oxidation Timewhere: B/A : Linear Rate ConstantGrowth rate is limited by reaction rate at the SiO2 interface1/3/2011Dr. Kian Kaviani EE-504L, Spring 201112The Deal Grove Model for Thermal...
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Week-4-SiO2-I - EE-504L :Solid State Processing and...

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