ECE474S11_Lec15_16Feb11

# ECE474S11_Lec15_16Feb11 - ECE 474 Principles of Electronic...

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Unformatted text preview: ECE 474: Principles of Electronic Devices Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University [email protected] V.M. Ayres, ECE474, Spring 2011 Lecture 15: Chp. 03 ¡ Examples: ¾ Probability f Ù “fermi distribution function” ¾ Reference energy E F Ù “Fermi energy” and doping ¾ Electron and hole concentrations n and p : for current I V.M. Ayres, ECE474, Spring 2011 Goal: current I ¡ I = I drift + I diffusion I drift = q( n μ n + p μ h ) E , E = electric field V μ = mobility cm cm s V Chp 04: I diffusion (n, p) ¾ Sub-goal: Concentration of carriers: electrons and holes n and p: Units: Concentration of holes p is related. ∫ = energy top energy least F )N(E)dE E f(E, n 3 # : cm electrons n V.M. Ayres, ECE474, Spring 2011 Goal: current I Note on names: n i and p i are concentrations of electrons and holes due to temperature T in an undoped (intrinsic) material n and p are concentrations of electrons and holes due to temperature T plus doping. n and p are concentrations of electrons and holes due to every source: temperature T, doping, light, etc. We will start with n and p and n i and p i V.M. Ayres, ECE474, Spring 2011 Basic definition: concentration of electrons n due to doping and temperature T: ∫ = energy top energy least F )N(E)dE E f(E, n N: The road f: The probability that the road is occupied E: the energy needed to occupy the road. V.M. Ayres, ECE474, Spring 2011V....
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ECE474S11_Lec15_16Feb11 - ECE 474 Principles of Electronic...

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