ECE474S11_Lec17_21Feb11

ECE474S11_Lec17_21Feb11 - ECE 474: Principles of Electronic...

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ECE 474: Principles of Electronic Devices Prof. Virginia Ayres Michigan State University ayresv@msu.edu
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V.M. Ayres, ECE474, Spring 2011 Lecture 17: Chp. 03 ± Doping: it’s neutral ¾ Space charge neutrality ¾ When usual doping approximation is justified ¾ When it is not: temperature extremes ¾ When you choose not: co-doping ± Physical aspects of doping ± Drift Current Examples of each
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V.M. Ayres, ECE474, Spring 2011 Lecture 17: Chp. 03 ± Doping: it’s neutral ¾ Space charge neutrality ¾ When usual doping approximation is justified ¾ When it is not: temperature extremes ¾ When you choose not: co-doping ± Physical aspects of doping ± Drift Current Examples of each
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V.M. Ayres, ECE474, Spring 2011 CB VB E g Free e Hole h + Undoped Si @ 300K: Temperature e hole A b s o r p ti o n e hole R e c o m b i n a ti o n
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V.M. Ayres, ECE474, Spring 2011 Undoped Si @ 300K: e hole e hole A b s o r p ti o n R e c o m b i n a ti o n Result: a steady state (average) concentration of e- and holes Si @ 300K: n i =p i = 1.5 x 10 10 cm -3
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Undoped Si @ 300K: Example: k b T = 0.0259 eV, not 1.11 eV. How is absorption possible?
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This note was uploaded on 03/01/2011 for the course ECE 474 taught by Professor Ayres during the Spring '09 term at Michigan State University.

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ECE474S11_Lec17_21Feb11 - ECE 474: Principles of Electronic...

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