{[ promptMessage ]}

Bookmark it

{[ promptMessage ]}

ECE474S11_Lec20_28Feb11

# ECE474S11_Lec20_28Feb11 - ECE 474 Principles of Electronic...

This preview shows pages 1–11. Sign up to view the full content.

ECE 474: Principles of Electronic Devices Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University [email protected]

This preview has intentionally blurred sections. Sign up to view the full version.

View Full Document
V.M. Ayres, ECE474, Spring 2011 Lecture 20: Exam 02 tentative date: Wednesday 30 March 2011
V.M. Ayres, ECE474, Spring 2011 Lecture 20: Chp. 03 Drift Current Hall effect Examples of each

This preview has intentionally blurred sections. Sign up to view the full version.

View Full Document
V.M. Ayres, ECE474, Spring 2011 Lecture 20: Chp. 03 Drift Current Hall effect Examples of each
V.M. Ayres, ECE474, Spring 2011 High power n-channel field effect transistor: Note I drift ____ and I diffusion ____ regions. n n p Wilkipedia ON

This preview has intentionally blurred sections. Sign up to view the full version.

View Full Document
V.M. Ayres, ECE474, Spring 2011 When a potential difference V/external field E exists across a semiconductor region: V = I R I = G V , G = conductance V in terms of Volts J = σ E , E = electric field (V/cm) σ = conductivity σ = 1/ ρ ρ = resistivity
V.M. Ayres, ECE474, Spring 2011 Consider current I in Amps. Can connect this to the electron n 0 and hole p 0 concentrations: I = charge/time = C/sec = Amp = q (concentration) (velocity) Area

This preview has intentionally blurred sections. Sign up to view the full version.

View Full Document
V.M. Ayres, ECE474, Spring 2011 I = charge/time = C/sec = Amp = q (concentration) (velocity) Area I = q(n 0 velocity electron + p 0 velocity hole ) Area