ECE474S11_Lec20_28Feb11

ECE474S11_Lec20_28Feb11 - ECE 474: Principles of Electronic...

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ECE 474: Principles of Electronic Devices Prof. Virginia Ayres Michigan State University ayresv@msu.edu
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V.M. Ayres, ECE474, Spring 2011 Lecture 20: Exam 02 tentative date: Wednesday 30 March 2011
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V.M. Ayres, ECE474, Spring 2011 Lecture 20: Chp. 03 ± Drift Current ± Hall effect Examples of each
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V.M. Ayres, ECE474, Spring 2011 Lecture 20: Chp. 03 ± Drift Current ± Hall effect Examples of each
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V.M. Ayres, ECE474, Spring 2011 High power n-channel field effect transistor: Note I drift ____ and I diffusion ____ regions. n n p Wilkipedia ON
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V.M. Ayres, ECE474, Spring 2011 When a potential difference V/external field E exists across a semiconductor region: V = I R I = G V , G = conductance V in terms of Volts J = σ E , E = electric field (V/cm) σ = conductivity σ = 1/ ρ ρ = resistivity
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V.M. Ayres, ECE474, Spring 2011 Consider current I in Amps. Can connect this to the electron n 0 and hole p 0 concentrations: I = charge/time = C/sec = Amp = q (concentration) (velocity) Area
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V.M. Ayres, ECE474, Spring 2011 I = charge/time = C/sec = Amp = q (concentration) (velocity) Area I = q(n 0 velocity electron + p 0 velocity hole ) Area
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( ) () 27) - (3 N p N n 25a) (3 exp n p 25a) (3 exp n n 24) - (3 n p n 20) (3 h kT m 2 π 2 (E) N 19) (3 exp N p 16a) (3 h kT m 2 π 2 (E) N 15) (3 exp N n d 0 - a 0 )/kT E E ( i 0 )/kT E E ( i 0 2 i 0 0 3/2 2 * h V /kT EV - E - V 0 3/2 2 * n C /kT E - E - C 0 F i i F F F C + + = + = = = = = = = Use these to find the carrier concentrations(n 0 , p 0 ) due to doping + temperature
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This note was uploaded on 03/01/2011 for the course ECE 474 taught by Professor Ayres during the Spring '09 term at Michigan State University.

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ECE474S11_Lec20_28Feb11 - ECE 474: Principles of Electronic...

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