4_mosfet_slides_achar

4_mosfet_slides_achar - ELEC 2507 Ram Achar Field Effect...

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ELEC 2507: Ram Achar - Field Effect Transistors (FETs) barb4right An Important Class of Devices, which is used for Amplification, Switching, Logic Circuits etc….. barb4right Highly popular in VLSI (Very Large Scale Integrated) circuits as they occupy less area compared to BJTs Metal oxide semiconductor field-effect transistor (MOSFET): When barb4right 1960, Invented by: Dr. Dawon Kahng and Dr. Martin Atalla Research Institute: Bell Labs Importance: MOSFET has achieved universal dominance in electronics by enabling the very large-scale integrated circuits (VLSI) that underly today's information society. Dawon Kahn: A physicist born in Seoul, emigrated to USA Martin M. (John) Atalla : Born in Cairo, 1924), & emigrated to USA
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Comparison of BJT v/s FET Easy Not Easy 8. Integrating on large scale Small Large 7. Area Required Comparatively lower freq. circuits High-Frequency circuits 8. Application Slow Fast 6. Switching Speed Low High 5. Voltage Gain Very high (M ) Very low (K - r ) 4. Input Impedance Gate current is extremely small Considerable Base Current 3. Base/Gate Current Voltage Controlled (Output current is mainly controlled by the GATE- SOURCE Voltage) Current Controlled (Output current is mainly controlled by the base current) 2. Device Type Unipolar (Only either electrons or holes contribute to the current flow) Bipolar (Both Holes and Electrons contribute to the current flow) 1. Current Flow Constituents FET BJT Properties
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FET n-channel p-channel enhancement depletion enhancement depletion Classification: Construction of n-channel enhancement MOSFET • Four terminals (S, G, D, B) • Heavily doped n-type regions beneath
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