EE 164 Problem Set 2 Solution

EE 164 Problem Set 2 Solution - EE 164 Problem 1 Problem...

Info iconThis preview shows pages 1–3. Sign up to view the full content.

View Full Document Right Arrow Icon
EE 164 Problem Set 2 Spring 2004 Problem 1 A potential difference of 8.5V is applied across an intrinsic silicon semiconductor material with length 12mm, width 3mm and height 1.5mm. a) Find the carrier velocities nn vE µ = Where, () 3 8.5 0.71 12 10 EV V EK V m lm m == = × 0.71 V m = 2 0.71 0.14 0.1 K V m m V s k m s × 0.1 n vk m s = ( ) ( ) 23 0.71 0.0355 10 pn K V m m V s m s = = 0.05 = × 35.5 p vm s = b) Find the current density np JJ J =+ ( ) ( ) 17 3 19 3 2 2.4 10 charges 1.6 10 0.1 10 3.84 ni n n Jn q v m C m s A m × × × = 2 3.84 n JA m = ( ) ( ) 17 3 19 2 2.4 10 charges 1.6 10 35.5 1.36 pi p p q v m C m s A m × × = 2 1.36 Am 22 3.84 1.36 A m A m =+= + 2 5.2 m =
Background image of page 1

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Problem 2 An extrinsic semiconductor exhibits material conductivity of 75 Sm . If the hole density is 12 3 6.3 10 charges m × , compute electron density and determine the type of semiconductor material. nn pp nq pq σ µµ =+ Solve for n () ( )( ) 12 19 21 19 75 6.3 10 0.05 1.6 10 3.35 10 0.14 1.6 10 pq n q σµ µ −× × == = × × 21 3.35 10 electrons n Since the number of electrons is larger than the number of holes, the semiconductor material in N-type.
Background image of page 2
Image of page 3
This is the end of the preview. Sign up to access the rest of the document.

This note was uploaded on 03/23/2011 for the course EEE 174 taught by Professor Kasab during the Spring '11 term at ASU.

Page1 / 3

EE 164 Problem Set 2 Solution - EE 164 Problem 1 Problem...

This preview shows document pages 1 - 3. Sign up to view the full document.

View Full Document Right Arrow Icon
Ask a homework question - tutors are online