EE 305 HW2

EE 305 HW2 - ECE 305 Homework #2 Due Monday, February 1...

Info iconThis preview shows pages 1–2. Sign up to view the full content.

View Full Document Right Arrow Icon
ECE 305 Homework #2 Due Monday, February 1 Problem 1: Semiconductor A and semiconductor B are both doped with acceptors to a concentration of 1x10 12 cm -3 . Semiconductor A has an intrinsic carrier concentration of 1x10 6 cm -3 , and semiconductor B has an intrinsic carrier concentration of 1x10 12 cm -3 . Assuming both semiconductors are non- degenerately doped, what are the equilibrium electron and hole concentrations for the two semiconductors? Problem 2: In Al 0.3 Ga 0.7 As , Si replaces 1x10 16 cm -3 of the Al or Ga atoms. Al and Ga are from column III, Si is from column IV, and As from column V, of the periodic table. What are the equilibrium electron and hole concentrations if n i = 1x10 5 cm -3 ? Assume the material is non-degenerate. Problem 3: In a GaAs sample, 2x10 16 cm -3 of the Ga atoms are replaced by Si atoms and 1x10 16 cm - 3 of the As atoms are replaced by Si atoms. What are the equilibrium electron and hole concentrations if n i = 1.8x10 6 cm -3 ? Note gallium is from column III, silicon is from
Background image of page 1

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Image of page 2
This is the end of the preview. Sign up to access the rest of the document.

Page1 / 2

EE 305 HW2 - ECE 305 Homework #2 Due Monday, February 1...

This preview shows document pages 1 - 2. Sign up to view the full document.

View Full Document Right Arrow Icon
Ask a homework question - tutors are online