EE 305 HW2

# EE 305 HW2 - ECE 305 Homework#2 Due Monday February 1...

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ECE 305 Homework #2 Due Monday, February 1 Problem 1: Semiconductor A and semiconductor B are both doped with acceptors to a concentration of 1x10 12 cm -3 . Semiconductor A has an intrinsic carrier concentration of 1x10 6 cm -3 , and semiconductor B has an intrinsic carrier concentration of 1x10 12 cm -3 . Assuming both semiconductors are non- degenerately doped, what are the equilibrium electron and hole concentrations for the two semiconductors? Problem 2: In Al 0.3 Ga 0.7 As , Si replaces 1x10 16 cm -3 of the Al or Ga atoms. Al and Ga are from column III, Si is from column IV, and As from column V, of the periodic table. What are the equilibrium electron and hole concentrations if n i = 1x10 5 cm -3 ? Assume the material is non-degenerate. Problem 3: In a GaAs sample, 2x10 16 cm -3 of the Ga atoms are replaced by Si atoms and 1x10 16 cm - 3 of the As atoms are replaced by Si atoms. What are the equilibrium electron and hole concentrations if n i = 1.8x10 6 cm -3 ? Note gallium is from column III, silicon is from

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EE 305 HW2 - ECE 305 Homework#2 Due Monday February 1...

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