ECE 305 Homework #2
Due Monday, February 1
Problem 1:
Semiconductor A and semiconductor B are both doped with acceptors to a
concentration of 1x10
12
cm
3
.
Semiconductor A has an intrinsic carrier
concentration of 1x10
6
cm
3
, and semiconductor B has an intrinsic carrier
concentration of 1x10
12
cm
3
. Assuming both semiconductors are non
degenerately doped, what are the equilibrium electron and hole concentrations for
the two semiconductors?
Problem 2:
In Al
0.3
Ga
0.7
As , Si replaces 1x10
16
cm
3
of the Al or Ga atoms. Al and Ga are from
column III, Si is from column IV, and As from column V, of the periodic table. What are
the equilibrium electron and hole concentrations if n
i
= 1x10
5
cm
3
? Assume the
material is nondegenerate.
Problem 3:
In a GaAs sample, 2x10
16
cm
3
of the Ga atoms are replaced by Si atoms and 1x10
16
cm

3
of the As atoms are replaced by Si atoms. What are the equilibrium electron and hole
concentrations if n
i
= 1.8x10
6
cm
3
? Note gallium is from column III, silicon is from
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 Spring '08
 MELLOCH
 intrinsic carrier concentration, semiconductor B, equilibrium electron

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