This preview has intentionally blurred sections. Sign up to view the full version.
View Full Document
Unformatted text preview: of the junction with higher doping. d) The maximum electric field is dependent only on the doping density on the pside. e) If I use a DMM to probe the voltage difference between the nbulk region and the pbulk region, I measure the magnitude of V bi . Problem 3: Consider the silicon diode described on the first line of the table in Problem 1 (i.e. with N D and N A each 1x10 17 ), but with a bias V appl applied to the pbulk region and the nbulk region grounded. For the bias points shown in the table below: i) Fill in the table ii) Draw a band diagram corresponding to that bias point, with the relevant energies drawn to scale (i.e. accurately represent the magnitude of the applied voltage with respect to that of the builtin potential). V Appl V bi V appl (V) W (m) x n (m) x p (m)  E max  (V/m) 0 + 0.5V  0.5V  2.0V...
View
Full Document
 Spring '08
 MELLOCH
 Volt, Pn junction, Vbi, Emax, maximum electric field

Click to edit the document details