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Unformatted text preview: of the junction with higher doping. d) The maximum electric field is dependent only on the doping density on the p-side. e) If I use a DMM to probe the voltage difference between the n-bulk region and the p-bulk region, I measure the magnitude of V bi . Problem 3: Consider the silicon diode described on the first line of the table in Problem 1 (i.e. with N D and N A each 1x10 17 ), but with a bias V appl applied to the p-bulk region and the n-bulk region grounded. For the bias points shown in the table below: i) Fill in the table ii) Draw a band diagram corresponding to that bias point, with the relevant energies drawn to scale (i.e. accurately represent the magnitude of the applied voltage with respect to that of the built-in potential). V Appl V bi V appl (V) W (m) x n (m) x p (m) | E max | (V/m) 0 + 0.5V - 0.5V - 2.0V...
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- Spring '08
- Volt, P-n junction, Vbi, Emax, maximum electric field