EE 305 HW#5

# EE 305 HW#5 - of the junction with higher doping d The...

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ECE 305 Homework #5 Due Monday, March 8 Problem 1: Consider a series of silicon diodes, each with abrupt junctions and operating at room temperature. Throughout this problem, there is no applied voltage. For the doping densities shown in the table, fill in the remaining values. You should show representative calculations (i.e. show the formulas for the calculations on row 2). Note that E max is the maximum electric field. N D (cm -3 ) N A (cm -3 ) V bi (V) W (μm) x n (μm) x p (μm) | E max | (V/cm) 1 x 10 17 1 x 10 17 1 x 10 15 1 x 10 15 1 x 10 17 1 x 10 15 1 x 10 15 1 x 10 17 Problem 2: Based on the values in your table, state whether these statements are true or false. a) For a symmetric junction, the built-in potential increases with increasing doping density. b) For a symmetric junction, the width of the depletion region decreases with increasing doping density. c) For an asymmetric junction (n + p or p + n), the widest portion of the depletion region is on the side

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Unformatted text preview: of the junction with higher doping. d) The maximum electric field is dependent only on the doping density on the p-side. e) If I use a DMM to probe the voltage difference between the n-bulk region and the p-bulk region, I measure the magnitude of V bi . Problem 3: Consider the silicon diode described on the first line of the table in Problem 1 (i.e. with N D and N A each 1x10 17 ), but with a bias V appl applied to the p-bulk region and the n-bulk region grounded. For the bias points shown in the table below: i) Fill in the table ii) Draw a band diagram corresponding to that bias point, with the relevant energies drawn to scale (i.e. accurately represent the magnitude of the applied voltage with respect to that of the built-in potential). V Appl V bi V appl (V) W (m) x n (m) x p (m) | E max | (V/m) 0 + 0.5V - 0.5V - 2.0V...
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EE 305 HW#5 - of the junction with higher doping d The...

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